{"title":"低插入损耗，高线性度，T/R开关在65nm的批量CMOS WLAN 802.11g应用","authors":"Yiping Han, K. Carter, L. Larson, A. Behzad","doi":"10.1109/RFIC.2008.4561529","DOIUrl":null,"url":null,"abstract":"A transmit-receiver (T/R) switch is fabricated in a 65 nm CMOS process for WLAN 802.11 g applications. By floating the triple well device, the switch achieves low insertion loss, high power handling capability and good linearity simultaneously. In the transmit mode, the switch features 0.8 dB insertion loss, 29 dBm output P1dB and less than 0.2 dB EVM degradation at 24 dBm output power level. In the receive mode, it exhibits 1.6 dB insertion loss and 28 dB isolation at 2.45 GHz.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A low insertion loss, high linearity, T/R switch in 65 nm bulk CMOS for WLAN 802.11g applications\",\"authors\":\"Yiping Han, K. Carter, L. Larson, A. Behzad\",\"doi\":\"10.1109/RFIC.2008.4561529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A transmit-receiver (T/R) switch is fabricated in a 65 nm CMOS process for WLAN 802.11 g applications. By floating the triple well device, the switch achieves low insertion loss, high power handling capability and good linearity simultaneously. In the transmit mode, the switch features 0.8 dB insertion loss, 29 dBm output P1dB and less than 0.2 dB EVM degradation at 24 dBm output power level. In the receive mode, it exhibits 1.6 dB insertion loss and 28 dB isolation at 2.45 GHz.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low insertion loss, high linearity, T/R switch in 65 nm bulk CMOS for WLAN 802.11g applications
A transmit-receiver (T/R) switch is fabricated in a 65 nm CMOS process for WLAN 802.11 g applications. By floating the triple well device, the switch achieves low insertion loss, high power handling capability and good linearity simultaneously. In the transmit mode, the switch features 0.8 dB insertion loss, 29 dBm output P1dB and less than 0.2 dB EVM degradation at 24 dBm output power level. In the receive mode, it exhibits 1.6 dB insertion loss and 28 dB isolation at 2.45 GHz.
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