堆叠HfO2/Y2O3栅极介质的增强和耗尽型GaAs n- mosfet

{"title":"堆叠HfO2/Y2O3栅极介质的增强和耗尽型GaAs n- mosfet","authors":"F. Zhu, S. Koveshnikov, I. Ok, H. Kim, V. Tokranov, M. Yakimov, S. Oktyabrsky, W. Tsai, J. Lee","doi":"10.1109/DRC.2006.305129","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancement and Depletion-mode GaAs N-MOSFETs with stacked HfO2/Y2O3 gate dielectric\",\"authors\":\"F. Zhu, S. Koveshnikov, I. Ok, H. Kim, V. Tokranov, M. Yakimov, S. Oktyabrsky, W. Tsai, J. Lee\",\"doi\":\"10.1109/DRC.2006.305129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}