{"title":"高稳定半导体激光器及其在光泵浦Rb原子钟上的应用","authors":"M. Ohtsu, M. Hashimoto, H. Ozawa","doi":"10.1109/FREQ.1985.200816","DOIUrl":null,"url":null,"abstract":"Frequency stability of 1 x 1 0-1 at T = 100 S was obtained for 0.8 u m AlGaAs laser by using spectral lines of Rb vapor as frequency references. It was confirmed that this value of the stability was as high as the value limited by spontaneous emission noise. Through an analysis based on a semiclassical Langevints equation, it was estimated that the stability can be improved to as high as reduction was also tried to improve the coherence of the semiconductor laser. A novel technique, i.e., electrical feedback, was proposed for this reduction instead of using a conventional technique of optical feedback. The linewidth was stably reduced by this technique. The minimum value obtained was 330 kHz for an InGaAsP laser at 1.5 p m, which was fifteen times narrower than that of a free-running laser. It was estimated that the linewidth can be ultimatelyreducedtoa value less than 1 kHz by this technique. Experiments on optical pumping for Rb atomic clock were carried out by using the highly stabilized semiconductor laser mentioned above. As the first step, experiments on saturated absorption spectroscopy of 87Rb D2 lines were carried out. Eleven lines, including cross-resonance lines, were clearly observed. As the next step, double resonance signal was obtained by laser optical pumping. The microwave frequency shift by the laser frequency and power were measured. The microwave frequency stability was also evaluated. Furthermore, a comment on the spectral lifetime of semiconductor laser for Rb atomic clock was given. 1.7 x 10-14 -112. Spectral linewidth","PeriodicalId":291824,"journal":{"name":"39th Annual Symposium on Frequency Control","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A Highly Stabilized Semiconductor Laser and Its Application to Optically Pumped Rb Atomic Clock\",\"authors\":\"M. Ohtsu, M. Hashimoto, H. Ozawa\",\"doi\":\"10.1109/FREQ.1985.200816\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Frequency stability of 1 x 1 0-1 at T = 100 S was obtained for 0.8 u m AlGaAs laser by using spectral lines of Rb vapor as frequency references. It was confirmed that this value of the stability was as high as the value limited by spontaneous emission noise. Through an analysis based on a semiclassical Langevints equation, it was estimated that the stability can be improved to as high as reduction was also tried to improve the coherence of the semiconductor laser. A novel technique, i.e., electrical feedback, was proposed for this reduction instead of using a conventional technique of optical feedback. The linewidth was stably reduced by this technique. The minimum value obtained was 330 kHz for an InGaAsP laser at 1.5 p m, which was fifteen times narrower than that of a free-running laser. It was estimated that the linewidth can be ultimatelyreducedtoa value less than 1 kHz by this technique. Experiments on optical pumping for Rb atomic clock were carried out by using the highly stabilized semiconductor laser mentioned above. As the first step, experiments on saturated absorption spectroscopy of 87Rb D2 lines were carried out. Eleven lines, including cross-resonance lines, were clearly observed. As the next step, double resonance signal was obtained by laser optical pumping. The microwave frequency shift by the laser frequency and power were measured. The microwave frequency stability was also evaluated. Furthermore, a comment on the spectral lifetime of semiconductor laser for Rb atomic clock was given. 1.7 x 10-14 -112. Spectral linewidth\",\"PeriodicalId\":291824,\"journal\":{\"name\":\"39th Annual Symposium on Frequency Control\",\"volume\":\"143 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"39th Annual Symposium on Frequency Control\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.1985.200816\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"39th Annual Symposium on Frequency Control","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.1985.200816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
摘要
以Rb蒸气谱线作为频率参考,得到了0.8 μ m AlGaAs激光器在T = 100 S时的频率稳定性为1 × 10 -1。结果表明,该稳定性值与受自发发射噪声限制的稳定性值相当。通过基于半经典朗万茨方程的分析,估计可以通过减小半导体激光器的相干性来提高激光器的稳定性。提出了一种新的技术,即电反馈,以减少这种减少,而不是使用传统的光反馈技术。该技术稳定地减小了线宽。在1.5 p m处,InGaAsP激光器获得的最小值为330 kHz,比自由运行激光器窄15倍。据估计,通过这种技术,线宽最终可以减少到小于1khz的值。利用上述高稳定半导体激光器对Rb原子钟进行了光泵浦实验。首先,对87Rb D2谱线进行了饱和吸收光谱实验。11条谱线,包括交叉共振谱线清晰可见。下一步,通过激光光泵浦获得双共振信号。测量了激光频率和功率对微波频移的影响。并对微波频率稳定性进行了评价。此外,还对铷原子钟半导体激光器的光谱寿命作了评述。1.7 × 10-14 -112。谱线宽
A Highly Stabilized Semiconductor Laser and Its Application to Optically Pumped Rb Atomic Clock
Frequency stability of 1 x 1 0-1 at T = 100 S was obtained for 0.8 u m AlGaAs laser by using spectral lines of Rb vapor as frequency references. It was confirmed that this value of the stability was as high as the value limited by spontaneous emission noise. Through an analysis based on a semiclassical Langevints equation, it was estimated that the stability can be improved to as high as reduction was also tried to improve the coherence of the semiconductor laser. A novel technique, i.e., electrical feedback, was proposed for this reduction instead of using a conventional technique of optical feedback. The linewidth was stably reduced by this technique. The minimum value obtained was 330 kHz for an InGaAsP laser at 1.5 p m, which was fifteen times narrower than that of a free-running laser. It was estimated that the linewidth can be ultimatelyreducedtoa value less than 1 kHz by this technique. Experiments on optical pumping for Rb atomic clock were carried out by using the highly stabilized semiconductor laser mentioned above. As the first step, experiments on saturated absorption spectroscopy of 87Rb D2 lines were carried out. Eleven lines, including cross-resonance lines, were clearly observed. As the next step, double resonance signal was obtained by laser optical pumping. The microwave frequency shift by the laser frequency and power were measured. The microwave frequency stability was also evaluated. Furthermore, a comment on the spectral lifetime of semiconductor laser for Rb atomic clock was given. 1.7 x 10-14 -112. Spectral linewidth