红外传感器在si衬底上形成PbTe

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI:10.1109/WOLTE.2002.1022454

V. I. Rudakov, I. Smirnov

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引用次数: 2

摘要

利用氟化钡(BaF 2)缓冲层，通过热壁外延直接在100 mm Si衬底上生长出了硫代铅(PbTe)层。采用baf2缓冲层克服了大的晶格和热膨胀失配。用x射线相分析研究了在硅衬底上生长的含baf2缓冲层PbTe薄膜的结构特征。我们在Si上制备了截止波长为5.2 μm的PbTe传感器。

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Forming PbTe on Si-substrates for IR sensors

The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly ort 100 mm Si substrate using a barium fluoride (BaF 2 ) buffer layer. BaF 2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe films grown on silicon substrates with the BaF 2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2 μm.

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Proceedings of the 5th European Workshop on Low Temperature Electronics

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