STT-MRAM热稳定性的综合统计研究

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894367

K. Hofmann, K. Knobloch, Christian Peters, R. Allinger

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引用次数: 7

摘要

热稳定性Δ是MRAM技术的关键参数。它决定了电流诱导开关行为以及数据保留和读干扰等可靠性性能。因此，对Δ进行高度准确的评估对于MRAM技术的成功开发是必不可少的。在本文中，我们提出了一种基于8Mb测试车辆统计数据的验证方法，揭示了~17%的广泛Δ分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comprehensive statistical investigation of STT-MRAM thermal stability

The thermal stability Δ is a key parameter of the MRAM technology. It determines the current induced switching behavior as well as the reliability performance of e.g. data retention and read-disturb. Therefore a highly accurate assessment of Δ is mandatory for a successful MRAM technology development. In this paper we present a verification methodology based on the statistical data of a 8Mb test vehicle revealing a wide Δ distribution of ~17%.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量