基于闪存技术的1mb 5晶体管/位非易失性CAM

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488505

T. Miwa, H. Yamada, Y. Hirota, T. Satoh, H. Hara

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引用次数: 8

摘要

基于闪存技术的1mb内容可寻址存储器LSI (flash CAM)具有由一对闪存单元晶体管组成的存储单元。在0.8 /spl mu/m的设计规则下，得到10.34 /spl mu/m/sup 2/ cell和42.9mm/sup 2/ die。flash CAM可以搜索掩码二进制数据。在5v电源电压下，读取访问时间为115ns，搜索访问时间为145ns。3.3 MHz时功耗为200mw。flash CAM单元由两个浮栅晶体管组成。这种结构与基于17晶体管sram的电池的比较器添加存储结构或基于dram的电池的五晶体管双电容形成强烈对比。除了非易失性，闪光相机还具有板载可编程/可擦除存储器。

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A 1 Mb 5-transistor/bit non-volatile CAM based on flash-memory technologies

A 1 Mb content-addressable memory LSI based on flash technologies (flash CAM) has memory cells consisting of a pair of flash memory cell transistors. 10.34 /spl mu/m/sup 2/ cell and 42.9mm/sup 2/ die are attained with 0.8 /spl mu/m design rules. The flash CAM can be searched for masked binary data. Read access time and search access time are 115 ns and 145 ns, respectively, with a 5 V supply voltage. Power dissipation is 200 mW at 3.3 MHz. The flash CAM cell consists of two floating-gate transistors. This structure is in strong contrast to the comparator-added-storage structure of 17-transistor SRAM-based cells or five-transistor two-capacitor of DRAM-based cells. In addition to non-volatility, flash CAMs also feature on-board programmable/erasable memory.

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

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