浮体对FDSOI射频放大器射频性能的影响

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563528

C. Chen, R. Chang, P. Wyatt, C.K. Chen, D. Yost, J.M. Knech, C. Keast

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引用次数: 3

摘要

研究了高频条件下体接触对全耗尽SOI浮体效应的影响。研究发现，FDSOI fet的浮体效应很小，体接触增加了寄生电容，降低了FDSOI fet的性能。我们证明了用180nm FDSOI技术制作的x波段放大器的线性度在连续波和脉冲模式下没有改变。

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Floating body effects on the RF performance of FDSOI RF amplifiers

The impact of body contacts on the floating body effect of fully depleted (FD) SOI at high frequencies is studied. It is found that the floating body effect is negligibly small for FDSOI FETs and the body contact (BC) increased parasitic capacitance and degraded the performance. We show that the linearity of an X-band amplifier, fabricated with a 180-nm FDSOI technology, is unchanged by the BC in continuous wave and pulse mode operations.

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2005 IEEE International SOI Conference Proceedings

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