T. Ayalew, Jong-Mun Park, A. Gehring, T. Grasser, S. Selberherr
{"title":"碳化硅积累模式横向扩散MOSFET","authors":"T. Ayalew, Jong-Mun Park, A. Gehring, T. Grasser, S. Selberherr","doi":"10.1109/ESSDERC.2003.1256943","DOIUrl":null,"url":null,"abstract":"We present a new accumulation-mode structure for silicon carbide laterally diffused MOSFETs. Key parameters that alter the device performance have been optimized using the device simulator MINIMOS-NT. The relationship between blocking and driving capability of the structure has been analyzed. Excellent I-V characteristics with significant improvement in the reduction of the gate bias voltage has been achieved. A blocking voltage of 1460 V with a small leakage current, a considerably lower specific on resistance of 93 m/spl Omega//spl middot/cm/sup 2/ and a fairly large advantage in electrical performance and device reliability were achieved.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Silicon carbide accumulation-mode laterally diffused MOSFET\",\"authors\":\"T. Ayalew, Jong-Mun Park, A. Gehring, T. Grasser, S. Selberherr\",\"doi\":\"10.1109/ESSDERC.2003.1256943\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new accumulation-mode structure for silicon carbide laterally diffused MOSFETs. Key parameters that alter the device performance have been optimized using the device simulator MINIMOS-NT. The relationship between blocking and driving capability of the structure has been analyzed. Excellent I-V characteristics with significant improvement in the reduction of the gate bias voltage has been achieved. A blocking voltage of 1460 V with a small leakage current, a considerably lower specific on resistance of 93 m/spl Omega//spl middot/cm/sup 2/ and a fairly large advantage in electrical performance and device reliability were achieved.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256943\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present a new accumulation-mode structure for silicon carbide laterally diffused MOSFETs. Key parameters that alter the device performance have been optimized using the device simulator MINIMOS-NT. The relationship between blocking and driving capability of the structure has been analyzed. Excellent I-V characteristics with significant improvement in the reduction of the gate bias voltage has been achieved. A blocking voltage of 1460 V with a small leakage current, a considerably lower specific on resistance of 93 m/spl Omega//spl middot/cm/sup 2/ and a fairly large advantage in electrical performance and device reliability were achieved.
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