2.4GHz ISM频段高线性、低噪声并联电阻反馈cmosslna

Aditi, Malti Bansal
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引用次数: 1

摘要

采用0.13 μm CMOS技术,设计了一种基于pi匹配网络的并联电阻反馈CMOS低噪声放大器。低噪声放大器的优化工作在2.4 GHz频段范围内。具有pi匹配输入的并联电阻反馈拓扑具有低噪声系数,中等增益和高线性度。采用Advanced Design System (ADS)软件进行仿真。该LNA采用1.2V电源电压,增益为15.417 dB,噪声系数为1.182 dB,输入反射系数(S11)为- 9.170 dB,反向增益(S12)为- 18.909 dB, IIP3为8 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High linearity and low noise shunt resistive feedback CMOSLNA in 2.4GHz ISM band
A shunt resistive feedback CMOS low noise amplifier (LNA) using a pi-matching network has been designed in this paper using 0.13 μm CMOS technology. The low noise amplifier is optimized for working in the 2.4 GHz frequency band range. The shunt resistive feedback topology with pi-matched input provides low noise figure, moderate gain and high linearity. Advanced Design System (ADS) software is used for simulation. The fabricated LNA uses 1.2V supply voltage and it exhibits a gain of 15.417 dB, noise figure of 1.182 dB, input reflection coefficient (S11) of −9.170 dB, reverse gain (S12) of −18.909 dB and an IIP3 of 8 dBm.
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