{"title":"一种新型低成本水平电流双极晶体管(HCBT)","authors":"T. Suligoj, P. Biljanovic, J. Sin, K. Wang","doi":"10.1109/BIPOL.2004.1365739","DOIUrl":null,"url":null,"abstract":"A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of the extrinsic regions, resulting in reduced parasitics. The HCBT structure exhibits the highest f/sub /spl tau// (30.4 GHz) and f/sub T/BV/sub CEO/ product (127.7 GHzV) among the lateral bipolar transistors.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"139 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasitics\",\"authors\":\"T. Suligoj, P. Biljanovic, J. Sin, K. Wang\",\"doi\":\"10.1109/BIPOL.2004.1365739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of the extrinsic regions, resulting in reduced parasitics. The HCBT structure exhibits the highest f/sub /spl tau// (30.4 GHz) and f/sub T/BV/sub CEO/ product (127.7 GHzV) among the lateral bipolar transistors.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"139 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasitics
A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of the extrinsic regions, resulting in reduced parasitics. The HCBT structure exhibits the highest f/sub /spl tau// (30.4 GHz) and f/sub T/BV/sub CEO/ product (127.7 GHzV) among the lateral bipolar transistors.
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