{"title":"改善短沟道效应的纳米三材料双栅极MOSFET","authors":"P. Razavi, A. Orouji","doi":"10.1109/ENICS.2008.33","DOIUrl":null,"url":null,"abstract":"In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.","PeriodicalId":162793,"journal":{"name":"2008 International Conference on Advances in Electronics and Micro-electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"55","resultStr":"{\"title\":\"Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects\",\"authors\":\"P. Razavi, A. Orouji\",\"doi\":\"10.1109/ENICS.2008.33\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.\",\"PeriodicalId\":162793,\"journal\":{\"name\":\"2008 International Conference on Advances in Electronics and Micro-electronics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"55\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Advances in Electronics and Micro-electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ENICS.2008.33\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advances in Electronics and Micro-electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ENICS.2008.33","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects
In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.
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