锥形光纤近场光学纳米光刻方法

Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003. Pub Date : 2003-06-29 DOI:10.1109/ICTON.2003.1264640

V.F. Dryakhlushin, A. Klimov, V. V. Rogov, N.V. Vostokov

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引用次数: 1

摘要

一种接触扫描近场光学光刻方法已经被开发出来，能够制造特征尺寸约为30 - 50纳米的元件。该方法包括薄层聚合物-金属涂层的沉积，用探针显微镜对上层金属层进行光热非塑性变形，通过干蚀刻聚合物转移图案，并通过该制备的掩膜形成各种纳米元素。该方法适用于与在其表面形成不同纳米物体(金属、电介质、表面蚀刻或其组合)有关的任何材料(金属、电介质、轻/重掺杂半导体)。

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Method of the near-field optical nanolithography using tapered optical fiber

A method of contact scanning near-field optical lithography has been developed to enable fabrication of elements with characteristic dimensions of about 30 - 50 nanometres. The method involves deposition of a thin-layer polymer-metal coating, photothermal nonplastic deformation of top metal layer with a probe microscope, the transfer of the pattern through the polymer of dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any materials (metal, dielectric, light/heavy doped semiconductors) relevant to the formation of different nanometre objects (metal, dielectric, etched in surface or its combinations) on their surface.

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Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.

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