毫米波放大器频率响应的精确仿真

Leigh E. Milner, L. Hall, M. Parker
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引用次数: 1

摘要

提出了一种精确模拟毫米波SiGe放大器频率响应的方法。电磁(EM)仿真应用于级联子电路优先于寄生提取,从而提高了模拟和测量性能之间的一致性。在电磁仿真中包括电阻器和电容器,可以捕获耦合和谐振效应,从而提高仿真精度。采用IHP 0.25μm SG25H1工艺制作的30 ~ 40 GHz两级变压器耦合放大器的测量结果与仿真结果非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate simulation of the frequency response of millimetre-wave sige amplifiers
A method of accurately simulating the frequency response of a millimeter-wave SiGe amplifier is presented. Electromagnetic (EM) simulation is applied to the cascode sub-circuit in preference to parasitic extraction resulting in improved agreement between simulated and measured performance. Including resistors and capacitors in the EM simulation allows coupling and resonance effects to be captured which improves the simulation accuracy. Close agreement is obtained between the measured and simulated results for a 30 to 40 GHz two-stage transformer coupled amplifier fabricated using IHP's 0.25μm SG25H1 process.
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