{"title":"一种3.4 GHz至4.3 GHz频率可重构E类功率放大器，集成了CMOS-MEMS LC平衡器","authors":"Leon Wang, T. Mukherjee","doi":"10.1109/RFIC.2010.5477276","DOIUrl":null,"url":null,"abstract":"A monolithically integrated differential class E power amplifier capable of dynamically switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a 0.35 µm BiCMOS process; this power amplifier also includes an integrated CMOS-MEMS variable capacitor enabled LC balun for differential to single-ended conversion. The power amplifier achieves a maximum output power of 19.1 dBm and a maximum power added efficiency of 15.1% with a supply voltage of 3.3 V.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun\",\"authors\":\"Leon Wang, T. Mukherjee\",\"doi\":\"10.1109/RFIC.2010.5477276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithically integrated differential class E power amplifier capable of dynamically switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a 0.35 µm BiCMOS process; this power amplifier also includes an integrated CMOS-MEMS variable capacitor enabled LC balun for differential to single-ended conversion. The power amplifier achieves a maximum output power of 19.1 dBm and a maximum power added efficiency of 15.1% with a supply voltage of 3.3 V.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun
A monolithically integrated differential class E power amplifier capable of dynamically switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a 0.35 µm BiCMOS process; this power amplifier also includes an integrated CMOS-MEMS variable capacitor enabled LC balun for differential to single-ended conversion. The power amplifier achieves a maximum output power of 19.1 dBm and a maximum power added efficiency of 15.1% with a supply voltage of 3.3 V.
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