{"title":"低温生长MBE GaAs中少数载流子结构与寿命的关系","authors":"Z. Liliental-Weber, S. Gupta, F. Smith","doi":"10.1109/SIM.1992.752689","DOIUrl":null,"url":null,"abstract":"The relation between the structural quality of low-temperature (LT) GaAs layers and minority carrier lifetime was determined. RHEED, transmission electron microscopy (TEM), time resolved reflectance methods, and photoconductive switch response measurements were used for this study. Subpicosecond minority carrier lifetimes were found already in as-grown layers, and this value did not change after annealing of the layers and formation of As precipitates. It was found that the responsivity of these layers depends strongly on the structural quality of the layers.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"36 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Relation between structure and lifetime of minority carriers -in MBE GaAs grown at low temperatures\",\"authors\":\"Z. Liliental-Weber, S. Gupta, F. Smith\",\"doi\":\"10.1109/SIM.1992.752689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The relation between the structural quality of low-temperature (LT) GaAs layers and minority carrier lifetime was determined. RHEED, transmission electron microscopy (TEM), time resolved reflectance methods, and photoconductive switch response measurements were used for this study. Subpicosecond minority carrier lifetimes were found already in as-grown layers, and this value did not change after annealing of the layers and formation of As precipitates. It was found that the responsivity of these layers depends strongly on the structural quality of the layers.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"36 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relation between structure and lifetime of minority carriers -in MBE GaAs grown at low temperatures
The relation between the structural quality of low-temperature (LT) GaAs layers and minority carrier lifetime was determined. RHEED, transmission electron microscopy (TEM), time resolved reflectance methods, and photoconductive switch response measurements were used for this study. Subpicosecond minority carrier lifetimes were found already in as-grown layers, and this value did not change after annealing of the layers and formation of As precipitates. It was found that the responsivity of these layers depends strongly on the structural quality of the layers.
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