电荷不平衡对超级结MOSFET静态和动态特性的影响分析

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764069

P. M. Shenoy, Ateet Bhalla, G. Dolny

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引用次数: 147

摘要

本文采用解析建模和数值模拟的方法，对一种新型的超结MOSFET器件进行了分析。详细研究了氮磷柱间电荷不平衡对器件静态和动态特性的影响。仿真结果表明，如果设计为最佳导通电阻，该器件对电荷不平衡高度敏感。击穿电压(BV)和E/sub off/灵敏度可以通过降低特定导通电阻R/sub on、sp/来显著降低。通过数值模拟，解释了该器件在电荷不平衡状态下的静态和动态特性。

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Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET

In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the N and P pillars on the static and dynamic characteristics of the device is studied in detail. Simulations predict that this device is highly sensitive to charge imbalance if designed for optimum on-resistance. The breakdown voltage (BV) and E/sub off/ sensitivity can be reduced considerably by degrading the specific on-resistance R/sub on,sp/. The physics of the static and dynamic behaviour of this device under charge imbalance is explained with the help of numerical simulations.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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