{"title":"采用铝合金高温溅射填充的高可靠性亚半微米通孔和互连技术","authors":"H. Nishimura, T. Yamada, R. Sinclair, S. Ogawa","doi":"10.1109/VLSIT.1992.200651","DOIUrl":null,"url":null,"abstract":"A technology using Al-Si-Cu alloy high-temperature sputter filling and a thin Ti underlayer to prevent Si from precipitating is discussed. Complete filling of a 0.15- mu m-diameter via with aspect ratio of 4.5 has been achieved. The resistance of the 0.3- mu m sputter filled via was 0.71 Omega . This is about one order of magnitude lower than that for a conventional via. The electromigration resistance of the 0.3- mu m filled via was found to be four orders of magnitude greater than that of the conventional vias. Superior stress-induced migration resistance of 0.5- mu m wide lines was confirmed.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A highly reliable sub-half-micron via and interconnect technology using Al alloy high-temperature sputter filling\",\"authors\":\"H. Nishimura, T. Yamada, R. Sinclair, S. Ogawa\",\"doi\":\"10.1109/VLSIT.1992.200651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A technology using Al-Si-Cu alloy high-temperature sputter filling and a thin Ti underlayer to prevent Si from precipitating is discussed. Complete filling of a 0.15- mu m-diameter via with aspect ratio of 4.5 has been achieved. The resistance of the 0.3- mu m sputter filled via was 0.71 Omega . This is about one order of magnitude lower than that for a conventional via. The electromigration resistance of the 0.3- mu m filled via was found to be four orders of magnitude greater than that of the conventional vias. Superior stress-induced migration resistance of 0.5- mu m wide lines was confirmed.<<ETX>>\",\"PeriodicalId\":404756,\"journal\":{\"name\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1992.200651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A highly reliable sub-half-micron via and interconnect technology using Al alloy high-temperature sputter filling
A technology using Al-Si-Cu alloy high-temperature sputter filling and a thin Ti underlayer to prevent Si from precipitating is discussed. Complete filling of a 0.15- mu m-diameter via with aspect ratio of 4.5 has been achieved. The resistance of the 0.3- mu m sputter filled via was 0.71 Omega . This is about one order of magnitude lower than that for a conventional via. The electromigration resistance of the 0.3- mu m filled via was found to be four orders of magnitude greater than that of the conventional vias. Superior stress-induced migration resistance of 0.5- mu m wide lines was confirmed.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
