{"title":"IGBT电源模块的静态和动态热特性","authors":"C. Yun, P. Regli, J. Waldmeyer, W. Fichtner","doi":"10.1109/ISPSD.1999.764037","DOIUrl":null,"url":null,"abstract":"This paper discusses the thermal behavior of an IGBT power module under static and dynamic conditions. Thermal interference and solder size effects were investigated. In the dynamic response, the thermal impedance was characterized by two transition times. For a pulse width modulation (PWM) scheme, conduction and switching losses are considered and a RC component model is proposed to predict the thermal characteristics in steady state periodic condition.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Static and dynamic thermal characteristics of IGBT power modules\",\"authors\":\"C. Yun, P. Regli, J. Waldmeyer, W. Fichtner\",\"doi\":\"10.1109/ISPSD.1999.764037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the thermal behavior of an IGBT power module under static and dynamic conditions. Thermal interference and solder size effects were investigated. In the dynamic response, the thermal impedance was characterized by two transition times. For a pulse width modulation (PWM) scheme, conduction and switching losses are considered and a RC component model is proposed to predict the thermal characteristics in steady state periodic condition.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Static and dynamic thermal characteristics of IGBT power modules
This paper discusses the thermal behavior of an IGBT power module under static and dynamic conditions. Thermal interference and solder size effects were investigated. In the dynamic response, the thermal impedance was characterized by two transition times. For a pulse width modulation (PWM) scheme, conduction and switching losses are considered and a RC component model is proposed to predict the thermal characteristics in steady state periodic condition.