利用新型前驱体的发光SiGeSn材料外延

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874700

J. Kouvetakis, J. Menéndez

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引用次数: 0

摘要

在过去的几年中，Si-Ge-Sn材料的开发和应用取得了重大进展，有几个小组展示了高性能光电器件，其特性超过了纯Ge所能实现的特性。在本报告中，我们回顾了在亚利桑那州立大学开发的晶体Ge1-ySny和Ge1-X-ySiiSny合金的合成、光学性质和初步器件研究。

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Epitaxy of light emitting SiGeSn materials using novel precursors

Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. In this presentation we review synthesis, optical properties and preliminary device studies of crystalline Ge1-ySny and Ge1-X-ySiiSny alloys developed at ASU.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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