{"title":"v波段LC-VCO在65nm SOI CMOS中的工艺可变性","authors":"D.D. Kim, Jonghae Kim, Choongyeun Cho","doi":"10.1109/RFIC.2008.4561401","DOIUrl":null,"url":null,"abstract":"The process variability of a V-band LC-VCO implemented in 65 nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300 mm wafers are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6 GHz, and it shows 90% yield from 65.1 to 67.9 GHz.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The process variability of a V-band LC-VCO in 65nm SOI CMOS\",\"authors\":\"D.D. Kim, Jonghae Kim, Choongyeun Cho\",\"doi\":\"10.1109/RFIC.2008.4561401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The process variability of a V-band LC-VCO implemented in 65 nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300 mm wafers are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6 GHz, and it shows 90% yield from 65.1 to 67.9 GHz.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
研究了在65nm SOI CMOS中实现的v波段LC-VCO的工艺变异性。一个互补的LC-VCO设计，测试设置，并提出了测量。对一批300mm晶圆进行了测量统计。这批有8片晶圆，每片有67个vco。分析和讨论了压控振荡器的频率调谐范围统计、数字基准的模拟变异性、良率估计以及晶圆内与晶圆间的变化。VCO的平均调谐频率为63.7 ~ 69.6 GHz，在65.1 ~ 67.9 GHz范围内显示90%的良率。
The process variability of a V-band LC-VCO in 65nm SOI CMOS
The process variability of a V-band LC-VCO implemented in 65 nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300 mm wafers are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6 GHz, and it shows 90% yield from 65.1 to 67.9 GHz.
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