{"title":"一种新的EEPROM单元模型","authors":"Zhiliang Hong","doi":"10.1109/ICSICT.1998.785920","DOIUrl":null,"url":null,"abstract":"A new model is presented for an EEPROM cell using devices existing in most simulators. Transient simulation can be performed with this model when the EEPROM cells perform erase, write and read operations. The compatibility has been verified by the examples in this paper.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new model for EEPROM cell\",\"authors\":\"Zhiliang Hong\",\"doi\":\"10.1109/ICSICT.1998.785920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new model is presented for an EEPROM cell using devices existing in most simulators. Transient simulation can be performed with this model when the EEPROM cells perform erase, write and read operations. The compatibility has been verified by the examples in this paper.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new model is presented for an EEPROM cell using devices existing in most simulators. Transient simulation can be performed with this model when the EEPROM cells perform erase, write and read operations. The compatibility has been verified by the examples in this paper.