晶圆重构中预测模具移位和晶圆翘曲的过程仿真

C.-Y. Yang, Y.C. Liu, K.‐S. Chen, T. Yang, Y.-C. Wang, S. Lee
{"title":"晶圆重构中预测模具移位和晶圆翘曲的过程仿真","authors":"C.-Y. Yang, Y.C. Liu, K.‐S. Chen, T. Yang, Y.-C. Wang, S. Lee","doi":"10.1109/ICEPT.2017.8046441","DOIUrl":null,"url":null,"abstract":"Wafer reconstitution is a vital process for serving as a buffer to decouple the processing developments between IC fabrication and electronics packaging. By this approach, the IC packaging is then independent from the chip processing. However, such a process brings numerous mechanical loadings during molding and curing phases. Without carefully planning, failures such as die-shifting and excessive wafer warpages are frequently reported and it induces problems for subsequent processing. In this work, it is desired to examine the key factor of die-shift and wafer warpage by performing both fluidic mold flow and solid thermo-mechanical analyses, as well as essential material characterizations. Preliminarily, the die-shift problem is deduced as interaction of fluid load, thermal expansion, shrinkage of molding compound and viscoelastic effect. To have a deeper insight, simplified fluid model and finite element analyses have been constructed to mimic the entire Recon process. For mold flow analysis, a simplified 1-D viscous flow analytical model is adapted. It aims to find the relationship between the molding parameters and the achieved velocity and pressure fields for calculating the possible drag and shear forces acting on dies for causing shift. On the other hand, after molding, the stress and deformation of the entire curing process is then performed by finite element method. The possible die shift and final warpage are then examined step by step to evaluate the contribution from each step and even each processing parameter. Both simplified 2-D axisymmetric and 3D models are performed and analyzed. The preliminary analysis results indicate that the thermal stress during curing is the current dominating factor. Related parameters such as the properties of compounds and carriers and the process parameters such as the curing temperature and duration could be the major controlling factors.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Process emulation for predicting die shift and wafer warpage in wafer reconstitution\",\"authors\":\"C.-Y. Yang, Y.C. Liu, K.‐S. Chen, T. Yang, Y.-C. Wang, S. Lee\",\"doi\":\"10.1109/ICEPT.2017.8046441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wafer reconstitution is a vital process for serving as a buffer to decouple the processing developments between IC fabrication and electronics packaging. By this approach, the IC packaging is then independent from the chip processing. However, such a process brings numerous mechanical loadings during molding and curing phases. Without carefully planning, failures such as die-shifting and excessive wafer warpages are frequently reported and it induces problems for subsequent processing. In this work, it is desired to examine the key factor of die-shift and wafer warpage by performing both fluidic mold flow and solid thermo-mechanical analyses, as well as essential material characterizations. Preliminarily, the die-shift problem is deduced as interaction of fluid load, thermal expansion, shrinkage of molding compound and viscoelastic effect. To have a deeper insight, simplified fluid model and finite element analyses have been constructed to mimic the entire Recon process. For mold flow analysis, a simplified 1-D viscous flow analytical model is adapted. It aims to find the relationship between the molding parameters and the achieved velocity and pressure fields for calculating the possible drag and shear forces acting on dies for causing shift. On the other hand, after molding, the stress and deformation of the entire curing process is then performed by finite element method. The possible die shift and final warpage are then examined step by step to evaluate the contribution from each step and even each processing parameter. Both simplified 2-D axisymmetric and 3D models are performed and analyzed. The preliminary analysis results indicate that the thermal stress during curing is the current dominating factor. Related parameters such as the properties of compounds and carriers and the process parameters such as the curing temperature and duration could be the major controlling factors.\",\"PeriodicalId\":386197,\"journal\":{\"name\":\"2017 18th International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 18th International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT.2017.8046441\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2017.8046441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

晶圆重构是一个至关重要的过程,作为缓冲,以分离IC制造和电子封装之间的加工发展。通过这种方法,IC封装就独立于芯片处理。然而,这种工艺在成型和固化阶段带来了大量的机械负荷。没有仔细的计划,失败,如模移和过度的晶圆翘曲经常被报道,并引起后续处理的问题。在这项工作中,希望通过执行流体模流和固体热力学分析以及基本材料特性来检查模移和晶圆翘曲的关键因素。初步将模移问题推导为流体载荷、热膨胀、模塑料收缩和粘弹性效应的相互作用。为了获得更深入的了解,我们构建了简化的流体模型和有限元分析来模拟整个Recon过程。对于模具流动分析,采用简化的一维粘性流动分析模型。目的是找出成型参数与所获得的速度场和压力场之间的关系,以便计算作用在模具上可能引起移位的阻力和剪切力。另一方面,在成型后,然后用有限元法进行整个固化过程的应力和变形。然后一步一步地检查可能的模具移位和最终翘曲,以评估每个步骤甚至每个加工参数的贡献。对简化的二维轴对称模型和三维模型进行了分析。初步分析结果表明,固化过程中的热应力是当前的主导因素。化合物和载体的性质等相关参数以及固化温度和固化时间等工艺参数可能是主要的控制因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process emulation for predicting die shift and wafer warpage in wafer reconstitution
Wafer reconstitution is a vital process for serving as a buffer to decouple the processing developments between IC fabrication and electronics packaging. By this approach, the IC packaging is then independent from the chip processing. However, such a process brings numerous mechanical loadings during molding and curing phases. Without carefully planning, failures such as die-shifting and excessive wafer warpages are frequently reported and it induces problems for subsequent processing. In this work, it is desired to examine the key factor of die-shift and wafer warpage by performing both fluidic mold flow and solid thermo-mechanical analyses, as well as essential material characterizations. Preliminarily, the die-shift problem is deduced as interaction of fluid load, thermal expansion, shrinkage of molding compound and viscoelastic effect. To have a deeper insight, simplified fluid model and finite element analyses have been constructed to mimic the entire Recon process. For mold flow analysis, a simplified 1-D viscous flow analytical model is adapted. It aims to find the relationship between the molding parameters and the achieved velocity and pressure fields for calculating the possible drag and shear forces acting on dies for causing shift. On the other hand, after molding, the stress and deformation of the entire curing process is then performed by finite element method. The possible die shift and final warpage are then examined step by step to evaluate the contribution from each step and even each processing parameter. Both simplified 2-D axisymmetric and 3D models are performed and analyzed. The preliminary analysis results indicate that the thermal stress during curing is the current dominating factor. Related parameters such as the properties of compounds and carriers and the process parameters such as the curing temperature and duration could be the major controlling factors.
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