{"title":"Ge(001)衬底上Ge0.83Sn0.17外延薄膜控制退火过程中锡丝的形变不稳定性和自组装","authors":"Lingzi Li, Wei Wang, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874671","DOIUrl":null,"url":null,"abstract":"Formation of Sn wires on Ge<sub>0.83</sub>Sn<sub>0.17</sub> layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate\",\"authors\":\"Lingzi Li, Wei Wang, E. Tok, Y. Yeo\",\"doi\":\"10.1109/ISTDM.2014.6874671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Formation of Sn wires on Ge<sub>0.83</sub>Sn<sub>0.17</sub> layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"2016 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate
Formation of Sn wires on Ge0.83Sn0.17 layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.
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