{"title":"用于蓝牙的两级级级F级CMOS功率放大器","authors":"Guo-Ming Sung, Xiang-jun Zhang, T. Hsiao","doi":"10.1109/ICASID.2012.6325305","DOIUrl":null,"url":null,"abstract":"In this paper, a two-stage cascode class F power amplifier (PA) intended for class 1 Bluetooth application is presented using standard 0.18-μm CMOS technology. In the proposed PA, a cascode schematic is used not only to avoid from overflow current but also to have a good isolation. Furthermore, the class F power amplifier is designed to improve the power efficiency using the operating mode in either triode or cut-off region. The simulation results present that the output power is larger than 20 dBm and the power added efficiency (PAE) is roughly 49%. Moreover, the multiple bonding wires are added to eliminate the parasitic capacitance of input stage (first) and to save the power dissipation.","PeriodicalId":408223,"journal":{"name":"Anti-counterfeiting, Security, and Identification","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A two-stage cascode class F CMOS power amplifier for Bluetooth\",\"authors\":\"Guo-Ming Sung, Xiang-jun Zhang, T. Hsiao\",\"doi\":\"10.1109/ICASID.2012.6325305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a two-stage cascode class F power amplifier (PA) intended for class 1 Bluetooth application is presented using standard 0.18-μm CMOS technology. In the proposed PA, a cascode schematic is used not only to avoid from overflow current but also to have a good isolation. Furthermore, the class F power amplifier is designed to improve the power efficiency using the operating mode in either triode or cut-off region. The simulation results present that the output power is larger than 20 dBm and the power added efficiency (PAE) is roughly 49%. Moreover, the multiple bonding wires are added to eliminate the parasitic capacitance of input stage (first) and to save the power dissipation.\",\"PeriodicalId\":408223,\"journal\":{\"name\":\"Anti-counterfeiting, Security, and Identification\",\"volume\":\"2012 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Anti-counterfeiting, Security, and Identification\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICASID.2012.6325305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Anti-counterfeiting, Security, and Identification","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASID.2012.6325305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A two-stage cascode class F CMOS power amplifier for Bluetooth
In this paper, a two-stage cascode class F power amplifier (PA) intended for class 1 Bluetooth application is presented using standard 0.18-μm CMOS technology. In the proposed PA, a cascode schematic is used not only to avoid from overflow current but also to have a good isolation. Furthermore, the class F power amplifier is designed to improve the power efficiency using the operating mode in either triode or cut-off region. The simulation results present that the output power is larger than 20 dBm and the power added efficiency (PAE) is roughly 49%. Moreover, the multiple bonding wires are added to eliminate the parasitic capacitance of input stage (first) and to save the power dissipation.
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