写入电阻交叉棒存储器中的最小干扰位

2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) Pub Date : 2018-07-17 DOI:10.1145/3232195.3232207

M. Fouda, A. Eltawil, F. Kurdahi

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引用次数: 2

摘要

电阻式存储器是非易失性存储器的有前途的候选者。写扰是这类记忆所面临的问题之一。本文用偏置参数对写入干扰问题进行了数学表述，并对写入干扰问题进行了解析优化。计算了最优偏置参数的封闭解。结果与1/2和1/3偏置方案进行了比较，显示出显著的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Minimal Disturbed Bits in Writing Resistive Crossbar Memories

Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.

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2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

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