{"title":"网络分析环境下模拟模糊电路的精度优化","authors":"J. Oehm, K. Schumacher","doi":"10.1109/ESSCIRC.1992.5468196","DOIUrl":null,"url":null,"abstract":"In contrast to digital circuits the performance of analog integrated circuits and therewith of analog fuzzy components highly depends on local matching accuracy. Especially for scaled structures down to the submicrometer range the local statistical mismatch effects increase rapidly. As in network analysis programs like SPICE [1] local statistical mismatch effects are not represented within the implemented device modelling, in consequence no analysis options are available to compute their influence on electrical circuit characteristics in fabrication. Fast analysis methods have been developed and implemented [2] into SPICE and the compatible simulator BONSAI [3], using especially mismatch modelling for MOS transistors introduced in [4] and [5]. Simulation methods and simulated yield statistics in comparison to measurements of fabricated analog fuzzy applications are reported.","PeriodicalId":242379,"journal":{"name":"ESSCIRC '92: Eighteenth European Solid-State Circuits conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Accuracy Optimization of Analog Fuzzy Circuitry in Network Analysis Environment\",\"authors\":\"J. Oehm, K. Schumacher\",\"doi\":\"10.1109/ESSCIRC.1992.5468196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In contrast to digital circuits the performance of analog integrated circuits and therewith of analog fuzzy components highly depends on local matching accuracy. Especially for scaled structures down to the submicrometer range the local statistical mismatch effects increase rapidly. As in network analysis programs like SPICE [1] local statistical mismatch effects are not represented within the implemented device modelling, in consequence no analysis options are available to compute their influence on electrical circuit characteristics in fabrication. Fast analysis methods have been developed and implemented [2] into SPICE and the compatible simulator BONSAI [3], using especially mismatch modelling for MOS transistors introduced in [4] and [5]. Simulation methods and simulated yield statistics in comparison to measurements of fabricated analog fuzzy applications are reported.\",\"PeriodicalId\":242379,\"journal\":{\"name\":\"ESSCIRC '92: Eighteenth European Solid-State Circuits conference\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '92: Eighteenth European Solid-State Circuits conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1992.5468196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '92: Eighteenth European Solid-State Circuits conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1992.5468196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accuracy Optimization of Analog Fuzzy Circuitry in Network Analysis Environment
In contrast to digital circuits the performance of analog integrated circuits and therewith of analog fuzzy components highly depends on local matching accuracy. Especially for scaled structures down to the submicrometer range the local statistical mismatch effects increase rapidly. As in network analysis programs like SPICE [1] local statistical mismatch effects are not represented within the implemented device modelling, in consequence no analysis options are available to compute their influence on electrical circuit characteristics in fabrication. Fast analysis methods have been developed and implemented [2] into SPICE and the compatible simulator BONSAI [3], using especially mismatch modelling for MOS transistors introduced in [4] and [5]. Simulation methods and simulated yield statistics in comparison to measurements of fabricated analog fuzzy applications are reported.