n型轻掺铁InP晶圆热退火后的半绝缘性能

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492036

R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti, K. Chearkaoui, G. Manakchi

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引用次数: 0

摘要

生长的掺铁半导体(SC) InP样品(残余载流子浓度/spl次/10/sup 15/ cm/sup -3/，估计铁浓度6-8/spl次/10/sup 15/ cm/sup -3/)在适当条件下退火后转化为半绝缘(SI)，具有高电阻率和良好的迁移率。这一事实非常有趣，因为它提供了获得低铁含量半绝缘InP的机会。在本文中，我们报告了退火参数以及处理样品的广泛表征(通过霍尔效应，C-V，红外吸收和PICTS)的结果。结果表明，电导率的下降与浅层供体的大量损失有关。

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Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing

As-grown Fe-doped semiconducting (SC) InP samples (residual carrier concentration /spl les/10/sup 15/ cm/sup -3/, estimated iron concentration 6-8/spl times/10/sup 15/ cm/sup -3/) were seen to convert to semi-insulating (SI), with high resistivity and good mobility, when annealed under appropriate conditions. This fact is very interesting since it gives the opportunity of obtaining semi-insulating InP with low Fe content. In this paper we report the annealing parameters together with the results of an extensive characterization (by Hall effect, C-V, IR absorption and PICTS) of the treated samples. The results suggest that the conductivity drop is related to a considerable loss of shallow donors.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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