28nm FD-SOI制程中2.45 GHz LC振荡器的最小供电电压

Mariana Siniscalchi, Nicolás Gammarano, C. Galup-Montoro, S. Bourdel, F. Silveira
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引用次数: 3

摘要

在28nm FD-SOI技术中,研究了2.45 GHz LC交叉耦合振荡器的最小电源电压限制。用简单的方程和查找表的方法得到了运行所需的最小电压和电流的理论预测。查表中加载了所有感兴趣的晶体管参数,这些参数是通过直流模拟提取的。只要晶体管的过渡频率至少为振荡频率的10倍,预测结果与仿真结果吻合较好。对于该电路的拓扑结构、振荡频率和技术而言,可行的电源电压为37 mV。根据背板电压值和所选电感的不同,电源电压降低受到寄生电容或晶体管固有增益的限制。文中还提供了一些公式来帮助设计者选择所有的设计参数,以达到尽可能低的电源电压和尽可能低的电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Minimum Supply Voltage of 2.45 GHz LC Oscillator in 28 nm FD-SOI Process
The minimum supply voltage limit is studied in the case of a 2.45 GHz LC cross-coupled oscillator, in a 28 nm FD-SOI technology. An approach with simple equations aided with look up tables is used to obtain a theoretical prediction of the minimum voltage and current required for operation. The look up tables are loaded with all the transistor parameters of interest, which are extracted by means of DC simulations. The prediction is in good agreement with the simulation results, as long as the transition frequency of the transistors is at least 10 times the oscillation frequency. A feasible supply voltage for this circuit topology, oscillation frequency and technology is shown to be 37 mV. Depending on the back-plane voltage value and the inductor selected, the supply voltage reduction is limited by either the parasitic capacitances or the intrinsic gain of the transistors. Equations are provided to aid the designer in the selection of all of the design parameters to achieve the lowest possible supply voltage and lowest possible current.
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