二元碳纳米管硅通孔在三维集成电路配电网中的适用性研究

Qing-Hao Hu, Wensheng Zhao, Kai Fu, Dawei Wang, Gaofeng Wang
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引用次数: 3

摘要

本研究探讨了碳纳米管(CNT)基硅通孔(tsv)用于提高三维集成电路(3d ic)功率完整性的可能性。该电路模型是针对2位碳纳米管TSV开发的,并通过全波电磁模拟器HFSS仿真进行了验证。结合验证的等效电路模型,将2位CNT TSV应用于配电网,并与传统的TSV阻抗进行了比较。利用2位CNT TSV的大电容和低电感,可以显著抑制3维IC的PDN阻抗,提高抗谐振频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the applicability of two-bit carbon nanotube through-silicon via for power distribution networks in 3-D integrated circuits
This study investigates the possibility of the carbon nanotube (CNT) ‐ based through ‐ silicon vias (TSVs) for improving power integrity of 3 ‐ D integrated circuits (3 ‐ D ICs). The circuit model is developed for 2 ‐ bit CNT TSV and validated through the full ‐ wave electromagnetic simulator HFSS simulations. The 2 ‐ bit CNT TSV is applied to power distribution networks (PDNs) by combining the validated equivalent ‐ circuit model and that TSV ‐ based PDN impedance is compared with the traditional one. By virtue of the large capacitance and low inductance of the 2 ‐ bit CNT TSV, the PDN impedance of the 3 ‐ D IC can be suppressed significantly and the anti ‐ resonant frequency can be increased.
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