LZZ标定技术在测试夹具上装置s参数测量中的应用

2015 85th Microwave Measurement Conference (ARFTG) Pub Date : 2015-05-22 DOI:10.1109/ARFTG.2015.7162916

M. Pulido-Gaytán, J. Reynoso‐Hernández, M. C. Maya‐Sanchez, A. Zarate-de Landa, J. R. Loo-Yau

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引用次数: 0

摘要

本文介绍了一种设计和验证一组微带结构的方法，这些微带结构是实现安装在同轴微带测试夹具上的器件的小信号特性中行、偏开、偏短(LZZ)校准技术所必需的。通过比较使用LZZ校正的GaN-HEMT封装晶体管的s参数与使用通反射线(TRL)校正技术校正的s参数，验证了LZZ校正在这种应用中的实用性。

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On the implementation of the LZZ calibration technique in the S-parameters measurement of devices mounted in test fixtures

This paper introduces a methodology for the design and verification of the set of microstrip structures necessary to implement the line, offset-open, offset-short (LZZ) calibration technique in the small-signal characterization of devices mounted in coaxial-to-microstrip test fixtures. The usefulness of the LZZ calibration in such application is verified by comparing the S-parameters of a GaN-HEMT packaged transistor corrected using the LZZ with those corrected using the thru-reflect-line (TRL) calibration technique.

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2015 85th Microwave Measurement Conference (ARFTG)

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