MEMS惯性传感的三层电容结构设计

B. Granados-Rojas, M. Reyes-Barranca, G. Abarca-Jimenez, L. M. Flores-Nava, J. Moreno-Cadenas
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引用次数: 8

摘要

本文提出了一种双端电容结构,其中引入了一种双交错(互指)方案的新结构。这种结构最初被设想为一种机制,以实现更大的电容板(终端)之间的集成电容器使用一个相对较小的设计面积在标准0.5μm,两个多晶硅和三个金属层(2P3M) CMOS技术。这项工作提出了一种三金属交织结构的设计和理论分析,该结构用作固定在集成CMOS-MEMS加速度计的验证质量上的变容管,其中有源器件是具有可变电容耦合系数的浮栅晶体管(FGMOS)。然而,三层几何方案可能在整个MEMS技术中具有广泛的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3-layered capacitive structure design for MEMS inertial sensing
In this paper a two-terminal capacitive structure is presented in which a novel architecture with a double interleaved (interdigitated) scheme is introduced. This structure was originally conceived as a mechanism to achieve a greater capacitance between the plates (terminals) of an integrated capacitor using a relatively smaller design area in the standard 0.5μm, two polysilicon and three metal layers (2P3M) CMOS technology. This work presents the design and theoretical analysis of a three-metal interleaved structure used as a varactor tied down to the proof mass of an integrated CMOS-MEMS accelerometer where the active devices are floating-gate transistors (FGMOS) with a variable capacitive coupling coefficient. Nevertheless, the three-layered geometrical scheme may have a wide range of applications across the MEMS technology.
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