金属/绝缘体/金属二极管的稳定性和偏置应力

N. Alimardani, J. F. Conley, E. W. Cowell, J. Wager, M. Chin, S. Kilpatrick, M. Dubey
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引用次数: 5

摘要

采用Al、Ir、Pt和超光滑非晶多金属(ZrCuAlNi)为底电极,通过原子层沉积均匀的Al2O3隧道介质,研究了金属/绝缘体/金属隧道二极管的性能和稳定性与界面粗糙度的关系。电流密度与场行为和器件成品率是界面粗糙度的函数,更光滑的电极表现出更理想的行为和更高的工作器件百分比。对直流偏置应力器件的初步研究表明,界面粗糙度在稳定性和可靠性方面也起着重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stability and bias stressing of metal/insulator/metal diodes
The performance and stability of metal/insulator/metal tunnel diodes was investigated as a function of interfacial roughness using Al, Ir, Pt, and ultra-smooth amorphous multi-metal (ZrCuAlNi) bottom electrodes with uniform Al2O3 tunnel dielectrics deposited via atomic layer deposition. Current density versus field behavior and device yield were found to be a function of interfacial roughness with smoother electrodes exhibiting more ideal behavior and higher percentages of working devices. A preliminary investigation of DC bias stressed devices suggests that interfacial roughness plays a large role in stability and reliability as well.
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