N. Alimardani, J. F. Conley, E. W. Cowell, J. Wager, M. Chin, S. Kilpatrick, M. Dubey
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Stability and bias stressing of metal/insulator/metal diodes
The performance and stability of metal/insulator/metal tunnel diodes was investigated as a function of interfacial roughness using Al, Ir, Pt, and ultra-smooth amorphous multi-metal (ZrCuAlNi) bottom electrodes with uniform Al2O3 tunnel dielectrics deposited via atomic layer deposition. Current density versus field behavior and device yield were found to be a function of interfacial roughness with smoother electrodes exhibiting more ideal behavior and higher percentages of working devices. A preliminary investigation of DC bias stressed devices suggests that interfacial roughness plays a large role in stability and reliability as well.
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