Y. Qin, Changqing Liu, G. Wilcox, K. Zhao, Changhai Wang
{"title":"电子互连用Sn-Ag-Cu钎料合金的电沉积","authors":"Y. Qin, Changqing Liu, G. Wilcox, K. Zhao, Changhai Wang","doi":"10.1109/EPTC.2009.5416536","DOIUrl":null,"url":null,"abstract":"A pyrophosphate and iodide based bath was investigated for the electrodeposition of near-eutectic Sn-Ag-Cu alloy, which is one of the promising lead-free solder candidates for electronics interconnection. The bath contained pyrophosphate and iodide as chelating agents. The composition of electrodeposits were measured by wavelength dispersive X-ray Spectroscopy (WDS). Different morphologies of deposited films were analysed using scanning electron microscopy (SEM). X-ray diffraction (XRD) data indicated that Sn, Ag3Sn and Cu6Sn5 were present in the “as-electroplated” film. The proposed bath was capable of fine pitch near-eutectic Sn-Ag-Cu solder bumps as demonstrated on a glass test wafer.","PeriodicalId":256843,"journal":{"name":"2009 11th Electronics Packaging Technology Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrodeposition of Sn-Ag-Cu solder alloy for electronics interconnection\",\"authors\":\"Y. Qin, Changqing Liu, G. Wilcox, K. Zhao, Changhai Wang\",\"doi\":\"10.1109/EPTC.2009.5416536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A pyrophosphate and iodide based bath was investigated for the electrodeposition of near-eutectic Sn-Ag-Cu alloy, which is one of the promising lead-free solder candidates for electronics interconnection. The bath contained pyrophosphate and iodide as chelating agents. The composition of electrodeposits were measured by wavelength dispersive X-ray Spectroscopy (WDS). Different morphologies of deposited films were analysed using scanning electron microscopy (SEM). X-ray diffraction (XRD) data indicated that Sn, Ag3Sn and Cu6Sn5 were present in the “as-electroplated” film. The proposed bath was capable of fine pitch near-eutectic Sn-Ag-Cu solder bumps as demonstrated on a glass test wafer.\",\"PeriodicalId\":256843,\"journal\":{\"name\":\"2009 11th Electronics Packaging Technology Conference\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 11th Electronics Packaging Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2009.5416536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 11th Electronics Packaging Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2009.5416536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrodeposition of Sn-Ag-Cu solder alloy for electronics interconnection
A pyrophosphate and iodide based bath was investigated for the electrodeposition of near-eutectic Sn-Ag-Cu alloy, which is one of the promising lead-free solder candidates for electronics interconnection. The bath contained pyrophosphate and iodide as chelating agents. The composition of electrodeposits were measured by wavelength dispersive X-ray Spectroscopy (WDS). Different morphologies of deposited films were analysed using scanning electron microscopy (SEM). X-ray diffraction (XRD) data indicated that Sn, Ag3Sn and Cu6Sn5 were present in the “as-electroplated” film. The proposed bath was capable of fine pitch near-eutectic Sn-Ag-Cu solder bumps as demonstrated on a glass test wafer.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
