基于分布函数的纳米线场效应管热载流子退化模拟

2018 International Integrated Reliability Workshop (IIRW) Pub Date : 2018-10-01 DOI:10.1109/IIRW.2018.8727081

M. Vandemaele, B. Kaczer, Z. Stanojević, S. Tyaginov, A. Makarov, A. Chasin, H. Mertens, D. Linten, G. Groeseneken

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引用次数: 3

摘要

热载流子退化(HCD)再次成为一个日益严重的超大规模集成电路可靠性问题。本文报道了基于载流子能量分布函数(DF)的Si纳米线场效应晶体管(NW fet)的热载流子模拟，并将结果与测量数据进行了比较。讨论了碰撞电离对HCD模拟的重要性。观察到通道中热载流子产生的界面缺陷的程度与若干场效应管参数的退化呈1:1的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs

Hot-carrier degradation (HCD) is again becoming a growing VLSI reliability problem. This work reports hot-carrier simulations for Si nanowire field-effect transistors (NW FETs) based on the carrier energy distribution function (DF) and compares the results to measured data. The importance of impact ionization for HCD simulations is discussed. A 1-to-1 relation between the extent of interface defects generated by hot-carriers in the channel and the degradation of several FET parameters is observed.

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2018 International Integrated Reliability Workshop (IIRW)

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