碳化硅功率器件及相关技术的最新进展

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI:10.1109/ICMEL.2004.1314551

J. Millán, P. Godignon, D. Tournier

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引用次数: 15

摘要

本文综述了高压SiC功率器件的最新进展。讨论了材料和碳化硅相关工艺技术的主要问题。本文还对碳化硅功率整流器和开关的现状和发展趋势进行了详细的综述。最后，报告了SiC jfet作为限流器件的应用，显示了SiC器件在某些应用中的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent developments in SiC power devices and related technology

This paper is an overview of recent progress in the development of high-voltage SiC power devices. Main issues on materials and SiC related process technology are also discussed. A detailed review of current situation and trends in SiC power rectifiers and switches is also given. Finally, an application of the SiC JFETs as a current limiter device is reported, showing the viability of SiC devices in certain applications.

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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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