Mie Fujitsu 55nm DDC的PVT补偿:基于标准细胞库的比较

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309246

T. C. Müller, Jean-Luc Nagel, M. Pons, D. Séverac, Katsuhiro Hashiba, Shinichi Sawada, Katsuji Miyatake, S. Emery, A. Burg

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引用次数: 3

摘要

在本文中，我们描述了Mie Fujitsu 55nm深度耗尽通道(DDC)技术中定制标准细胞库(SCL)的交叉角和细胞间变化。预表征的Liberty库文件被用作一个数据集，用于比较无偏库和使用自适应体偏(ABB)来补偿过程电压和温度(PVT)变化的表征。结果表明，在ABB的应用下，交叉角中值延迟变化从2154%下降到18%。

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PVT compensation in Mie Fujitsu 55 nm DDC: A standard-cell library based comparison

In this paper we characterize the cross corner and cell to cell variation of a custom standard cell library (SCL) in Mie Fujitsu 55nm Deeply Depleted Channel (DDC) technology. Precharacterized Liberty library files are used as a dataset for comparing both the unbiased library against a characterization using adaptive body biasing (ABB) to compensate for process voltage and temperature (PVT) variation. Results show a reduction of the cross corner median delay variation from 2154% down to 18% with the application of ABB.

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2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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