90纳米及以上技术的植入后条带优化

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI:10.1109/ASMC.2006.1638770

N. Fuller, A. Santiago, K. Mello, Chienfan Yu, S. Molis

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引用次数: 3

摘要

利用光学发射光谱、扫描电镜(SEM)和SIMS分析了抗蚀剂材料在离子注入条件下形成的修饰层，并表征了在商业条带工具上暴露于各种等离子体条带化学物质时该修饰层的去除率。该方法用于评估候选条带化学物质，以减少植入后条带缺陷和增加设备功能收率

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Post Implant Strip Optimization for 90nm and Beyond Technologies

Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This methodology was used to evaluate candidate strip chemistries for reducing post implant strip defectivity and increasing device functional yield

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The 17th Annual SEMI/IEEE ASMC 2006 Conference

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