水化钛工艺在超薄SIMOX晶片上的应用

K. Azuma, A. Kishi, M. Tanigawa, S. Kaneko, T. Naka, A. Ishihawa, K. Iguchi, K. Sakiyama
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引用次数: 3

摘要

全耗尽超薄SIMOX/CMOS由于具有低电压运行能力,是实现低电压和高速应用的合适技术。然而,扩散面积的电阻率大是一个问题。本文采用薄的盐化层来降低超薄SIMOX层的片电阻率。获得了良好的晶体管特性,片电阻率小于非硅化扩散电阻率的十分之一,并且没有观察到晶体管特性的退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Application of Ti salicide process on ultra-thin SIMOX wafer
Fully-depleted, ultra-thin SIMOX/CMOS is a suitable technology to achieve low voltage and high speed application because of its capability of low Vth operation. However, large resistivity of diffusion area is an issue. In this paper,a thin salicidation layer was adopted to decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were achieved, and no degradation of the transistor characteristics was observed.
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