通过界面氟化提高铁电场效应管的耐久性和缺陷表征

2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI:10.1109/IMW52921.2022.9779277

Y. Raffel, R. Olivo, M. Lederer, F. Müller, R. Hoffmann, T. Ali, K. Mertens, L. Pirro, M. Drescher, S. Beyer, T. Kämpfe, K. Seidel, L. Eng, J. Heitmann

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引用次数: 5

摘要

基于hfo2的铁电场效应管(fefet)提供了出色的保留性、可扩展性和内存窗口。然而，实现高耐力仍然具有挑战性。在这里，氟化处理提出，使显着的耐久性和设备稳定性的改善。应用噪声和电荷泵送方法来深入了解效应场效应管中潜在的缺陷相互作用。

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Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination

HfO2-based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the underlying defect interaction in FeFETs.

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2022 IEEE International Memory Workshop (IMW)

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