功率mosfet的空间和光谱氧化阱分布

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858593

A. Torres, O. Flament, C. Marcandella, O. Musseau, J. Leray

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引用次数: 9

摘要

采用辐照和后辐照方法研究了功率MOSFET氧化物的电荷俘获特性。我们确定了四种硬化和未硬化器件氧化物中的光谱和空间陷阱分布。一个未硬化的器件似乎呈现出接近SIMOX埋氧化物的捕获行为。

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Spatial and spectral oxide trap distributions in power MOSFETs

Charge trapping features of a power MOSFET oxide are investigated by irradiation and post irradiation methods. We determine the spectral and the spatial trap distribution in the oxide of four hardened and unhardened devices. One unhardened device seems to present a trapping behavior close to the SIMOX buried oxide one.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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