一种基于可扩展沟槽蚀刻的高压垂直复用mosfet工艺

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487944

C. Rochefort, R. Dalen

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引用次数: 7

摘要

在这项工作中，首次使用沟槽蚀刻和气相掺杂工艺制造的垂直RESURF mosfet描述了超过300V的击穿电压。我们证明了这个概念可以扩展到更高的击穿电压范围。该器件具有创纪录的0.98/spl ω /mm/sup 2/的低比电阻，击穿电压为473V。这是迄今为止任何超结技术的最佳结果，证明是商业上使用的多外延技术的良好替代方案。

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A scalable trench etch based process for high voltage vertical RESURF MOSFETs

In this work, for the first time, vertical RESURF MOSFETs manufactured using a trench etch and vapor phase doping process depict a breakdown voltage above 300V. We prove that this concept is scalable to a much higher breakdown voltage range. The device features a record low specific resistance of 0.98/spl Omega/mm/sup 2/ with a breakdown voltage of 473V. This best result to-date for any superjunction technology proves to be a good alternative to the multi-epitaxy technique commercially in use.

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来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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