M. Terai, S. Kotsuji, H. Hada, N. Iguchi, T. Ichihashi, S. Fujieda
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Effect of ReRAM-stack asymmetry on read disturb immunity
We investigated the effect of ReRAM-stack asymmetry on read disturb immunity. Stacking stoichiometric Ta2O5 and ultrathin TiO2 led to bipolar switching property. Filament (conduction path) penetrated both Ta2O5 and TiO2 layer. Because single Ta2O5 film has no switching property, the resistance was not changed under positive bias on Ta2O5-side electrode. Under negative bias, the resistance of the filament near TiO2-side electrode increases because of anodic oxidation. A high read-disturb immunity were achieved by using the 1T1R ReRAM of this stack. These results can be attributed to the asymmetric switching behavior of the stoichiometric Ta2O5/ultrathin-TiO2 stack.
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