间隔区对解释28nm Bulk和FDSOI技术中短通道迁移率崩溃的重要性

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948808

F. Monsieur, Y. Denis, D. Rideau, V. Quenette, G. Gouget, C. Tavernier, H. Jaouen, G. Ghibaudo, J. Lacord

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引用次数: 10

摘要

这项工作的重点是什么驱动访问阻力。基于TCAD仿真，我们证明了接入电阻确实依赖于栅极电压。在此基础上，在考虑了一个接入电阻紧凑模型后，我们证明了接入电阻电压依赖性会产生一个人工的短通道迁移率崩溃。根据实际硅数据，建立了μo-L与Rac-Vg之间的联系。特别地，这一关系预示着负电阻可以从窄器件中提取出来，与实验结果一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

This work focuses on what drives the access resistance. Based on TCAD simulations, we evidence that the access resistance does depend on gate voltage. From this statement, after considering an access resistance compact model, we show that the access resistance voltage dependence generates an artificial short channel mobility collapse. Based on actual silicon data we establish link between μo-L and Rac-Vg. In particular this relation predicts that negative resistance could be extracted for narrow devices in agreement with experiments.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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