{"title":"氧化纳米多孔硅基片上氧化锌薄膜紫外传感器件的研制","authors":"K. Wu, C. Tang, Sheng-Chun Lin","doi":"10.1109/NMDC.2013.6707467","DOIUrl":null,"url":null,"abstract":"This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300~400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates\",\"authors\":\"K. Wu, C. Tang, Sheng-Chun Lin\",\"doi\":\"10.1109/NMDC.2013.6707467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300~400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.\",\"PeriodicalId\":112068,\"journal\":{\"name\":\"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2013.6707467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2013.6707467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates
This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300~400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.
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