一种新型的0.25 μm GaN-on-SiC真对数放大器,用于雷达应用

A. Salvucci, M. Vittori, S. Colangeli, G. Polli, E. Limiti
{"title":"一种新型的0.25 μm GaN-on-SiC真对数放大器,用于雷达应用","authors":"A. Salvucci, M. Vittori, S. Colangeli, G. Polli, E. Limiti","doi":"10.1109/PRIME.2018.8430351","DOIUrl":null,"url":null,"abstract":"A new circuit topology for a true logarithmic amplifier (TLA) basic cell is presented. The basic cell is synthesized in quasi-distributed form as the cascade of two single-FET stages. Whereas the operating principle of the overall TLA is well-known (i.e., cascading several hard-limiting cells), the topology of the proposed basic cell is not common. The broadband characteristics and the extreme compactness of the proposed architecture make it particularly suitable for the realization of multi-stage TLAs. The proposed basic cell is then adopted to design, as a test vehicle, a six-stages TLA, using a 0.25 μm GaN-on-SiC HEMT technology provided by UMS foundry. The final MMIC exhibits a broadband behavior, in the range 1.2 GHz-2.2 GHz, with a global logarithmic error of ±1 dB over 60 dB of input dynamic range (IDR).","PeriodicalId":384458,"journal":{"name":"2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications\",\"authors\":\"A. Salvucci, M. Vittori, S. Colangeli, G. Polli, E. Limiti\",\"doi\":\"10.1109/PRIME.2018.8430351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new circuit topology for a true logarithmic amplifier (TLA) basic cell is presented. The basic cell is synthesized in quasi-distributed form as the cascade of two single-FET stages. Whereas the operating principle of the overall TLA is well-known (i.e., cascading several hard-limiting cells), the topology of the proposed basic cell is not common. The broadband characteristics and the extreme compactness of the proposed architecture make it particularly suitable for the realization of multi-stage TLAs. The proposed basic cell is then adopted to design, as a test vehicle, a six-stages TLA, using a 0.25 μm GaN-on-SiC HEMT technology provided by UMS foundry. The final MMIC exhibits a broadband behavior, in the range 1.2 GHz-2.2 GHz, with a global logarithmic error of ±1 dB over 60 dB of input dynamic range (IDR).\",\"PeriodicalId\":384458,\"journal\":{\"name\":\"2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PRIME.2018.8430351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRIME.2018.8430351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种用于真对数放大器(TLA)基本单元的新型电路拓扑结构。基本单元以两个单场效应管级联的准分布形式合成。虽然整个TLA的工作原理是众所周知的(即,级联几个硬限制单元),但所提出的基本单元的拓扑结构并不常见。该架构的宽带特性和极其紧凑的结构使其特别适合于多级tla的实现。然后采用所提出的基本电池设计作为测试载体,采用由UMS代工厂提供的0.25 μm GaN-on-SiC HEMT技术设计了六级TLA。最终的MMIC在1.2 GHz-2.2 GHz范围内表现出宽带性能,在输入动态范围(IDR)的60 dB范围内,其全局对数误差为±1 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel true logarithmic amplifier in 0.25 μm GaN-on-SiC technology for radar applications
A new circuit topology for a true logarithmic amplifier (TLA) basic cell is presented. The basic cell is synthesized in quasi-distributed form as the cascade of two single-FET stages. Whereas the operating principle of the overall TLA is well-known (i.e., cascading several hard-limiting cells), the topology of the proposed basic cell is not common. The broadband characteristics and the extreme compactness of the proposed architecture make it particularly suitable for the realization of multi-stage TLAs. The proposed basic cell is then adopted to design, as a test vehicle, a six-stages TLA, using a 0.25 μm GaN-on-SiC HEMT technology provided by UMS foundry. The final MMIC exhibits a broadband behavior, in the range 1.2 GHz-2.2 GHz, with a global logarithmic error of ±1 dB over 60 dB of input dynamic range (IDR).
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