硅离子和HKMG器件中SILC、BTI和RTN(相关)陷阱位点的研究

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 1900-01-01 DOI:10.1109/IPFA.2014.6898196

E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Goes, T. Grasser, N. Horiguchi, G. Groeseneken

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引用次数: 16

摘要

最近，几个实验小组已经发现了栅极和漏极电流波动的相关性。本文通过对单阱激活漏路的研究，提供了证据和一个改进的四态缺陷模型，将纳米场效应管中额外的栅隧穿电流归因于热激活缺陷态。该模型能够解释栅极和漏极电流RTN的正相关和负相关，但也可以解释这些漏极和栅极RTN信号的大多数不相关性质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Recently, several experimental groups have found correlations in gate and drain current fluctuations. In this paper, by studying single trap activated leakage paths, both evidence and a refined 4-state defect model are provided, ascribing additional gate tunneling current in nm-FETs to thermally activated defect states. The model is capable of explaining both positive and negative correlations in gate and drain current RTN, but also the mostly uncorrelated nature of these drain and gate RTN signals.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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