大QFP中电磁兼容陡转引起的足跟开裂

Y.M. Lee, J. Cho, Y. Sun, N. Kim
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引用次数: 4

摘要

对大型QFP中焊丝后跟裂纹现象进行了研究。通过分析发现,这种开放性破坏是由成型过程中缝接处的后跟裂纹引起的。进行了模具仿真,进行了定量分析。该软件考虑了EMC的聚合动力学,因为模流取决于热偏移。仿真结果表明,栅极附近电磁兼容随转换率梯度的增大而减小。此时,电磁兼容的化学收缩导致金丝因张力过大而断裂。模具仿真分析与实验结果吻合。通过对焊丝粘接和成型参数的优化设计,解决了焊后跟裂纹问题。采用大截面积的毛细针脚可以提高鞋跟抗裂能力。另一种抑制跟裂的方法是使用化学收缩率较小的EMC。另外,通过将成型温度从175/spl℃降低到168/spl℃,得到了进一步的改进。最后,电磁兼容的化学收缩是一个重要的性能,需要减少,以尽量减少传递成型失败,特别是对于大尺寸封装。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heel cracking induced by the steep conversion of EMC in large QFP
Bonding wire heel crack observed in large QFP was studied. From the analysis, it was found that this type of open failure was caused by heel crack at stitch bond during molding. The mold simulation was conducted for quantitative analysis. The software considers the polymerization kinetics of EMC since the mold flow depends on thermal excursion. According to simulation, it was proven that the EMC near gate shrinks with very steep gradient of conversion rate. At this moment the chemical shrinkage of EMC results in the fracture of Au wire due to the excessive tension. The mold simulation analysis coincides with experimental results. Both wire bonding and molding parameters were optimized to solve the heel crack problem. The heel crack resistance could be improved by using a capillary which makes large cross-sectional area of stitch bond. The other solution to suppress the heel crack was to use EMC having a smaller chemical shrinkage. Also an additional improvement was obtained by decreasing molding temperature from 175/spl deg/C to 168/spl deg/C. Conclusively, the chemical shrinkage of EMC is an important property and needs to be reduced to minimize the transfer molding failures, especially for the large body size packages.
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