二维约束晶格再生增强超薄α-硅薄膜的再结晶

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589305

Hao Zhang, Ming Li, Gong Chen, Yuancheng Yang, Ru Huang

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引用次数: 1

摘要

本文采用常规快速热退火工艺对超薄非晶硅(α-Si)薄膜进行了二维约束晶格再生，实现了超薄非晶硅(α-Si)薄膜的再结晶改进。通过实验研究发现，即使在850℃下快速热退火(RTA) 35s，厚度为400 Å的α-Si薄膜也能再结晶。封顶Si3N4层后，晶格再生更严格地限制在薄膜平面上，从而获得更光滑、质量更高的多晶硅薄膜，适用于未来的单片三维(3D)堆叠集成工艺。

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Enhanced recrystallization of ultra-thin α-silicon film by 2-D confined lattice regrowth

In this paper, the improved recrystallization of ultra-thin amorphous silicon (α-Si) film was realized by two-dimensionally confined lattice regrowth with normal rapid thermal annealing process. By experimental investigation, the α-Si films with thickness of 400 Å were found to be recrystallized even at 850°C for only 35s rapid thermal annealing (RTA). With capped Si3N4 layer, the lattice regrowth was confined more strictly to along the film plane so that smoother and higher-quality polycrystalline silicon film was obtained which is suitable for future monolithic three dimensional (3D) stacked integration processes.

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2016 IEEE International Nanoelectronics Conference (INEC)

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