先进微电子:SOI的作用

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819832

D. Radack

{"title":"先进微电子:SOI的作用","authors":"D. Radack","doi":"10.1109/SOI.1999.819832","DOIUrl":null,"url":null,"abstract":"Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA's Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Advanced Microelectronics: the role of SOI\",\"authors\":\"D. Radack\",\"doi\":\"10.1109/SOI.1999.819832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA's Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

绝缘体上硅(SOI)技术已经开发用于恶劣环境中的电子产品，最近用于低功耗电子产品。在过去的几年里，DARPA的高级微电子项目资助了大量研究适合高度集成电路的25纳米硅晶体管。该计划下的许多设备研究工作都在利用SOI。程序描述在这里。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced Microelectronics: the role of SOI

Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA's Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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