一个1024位，融合链路CMOS PROM

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1977.1155652

J. Schroeder, R. Goslin

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引用次数: 8

摘要

可编程只读存储器(PRO%)已经可用好几年了。以前的熔接PROMS ' 3 '采用双极技术，其伴随的高功耗。MOS prom在双介电或浮栅结构中使用电荷存储。这些存储器的工作范围受到高温下电荷损失的限制^^'^。本文将介绍一种克服这些早期限制的融合链路CMOS PROhI。表1总结了其基本特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1024-bit, fused link CMOS PROM

PROGRAMMABLE read-only memories (PRO%) have been available for several years. Previous fused-link PROMS‘ 3‘ have used bipolar technology with its accompanying high power dissipation. MOS PROMS have used charge storaxe in dualdielectric3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^^'^. This paper will describe a fused-link CMOS PROhI which overcomes these earlicr limitations. The basic features are summarized in Table I.

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1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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